Atomic ordering in GaAsSb (001) grown by metalorganic vapor phase epitaxy

摘要

Epitaxial GaAsSb (001) semiconductor alloys grown by metalorganic vapor phase epitaxy exhibit several spontaneously ordered structures. A superlattice structure with three-fold ordering in the [110] direction has been previously observed by different groups. CuAu structures with (100) and (010) ordering planes have also been reported. The physical origin of CuAu ordering in III-V semiconductors has not yet been explained. In this work we report the effect of growth conditions on CuAu ordering in GaAsSb, including miscut from (001), growth rate, bismuth surfactant concentration, and growth temperature. These data point to a surface kinetic mechanism not based on dimer strain, but possibly due to one-dimensional ordering at step edges.