Photoluminescence characterization of type II InGaAs/AlAsSb heterostructures lattice matched to InP grown by molecular beam epitaxy

摘要

We report here the photoluminescence characterization of InGaAs/AlAsSb quantum wells lattice matched to InP substrate grown by molecular beam epitaxy. A strong blueshift of the PL peak energy was observed as the excitation power increased. Furthermore, these peaks were shown to belong to an excitonic recombination. We have attributed these peaks to the radiative recombination of spatially separated electron-hole pairs and confirmed the type II band alignment. Impurity- or defect-related transitions were also observed.