Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs (001) vicinal surfaces

摘要

In the present work, we investigated the influence of step bunching on the optical properties of IngaAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy (MBE) on vicinal surfaces. Photoluminescence (PL) measurements showed a larger full width at half maximum (FWHM) of the emission coming from the QWs grown on the vicinal surfaces with respect to the nominal sample. Transmission-electron-microscopy (TEM) measurements revealed the presence of step bunches that clearly roughen the interfaces of the heterostructures and worsen the optical properties of the samples.