Self-assembled growth of cubic silicon carbide nano-islands on silicon

摘要

Silicon carbide(SiC) nano-crystallites are formed by the thermal reaction of C_60 molecules with silicon atoms on Si(001) and Si(111) surfaces at 900-1150deg.C. The surface morphologies and structures of the cubic β-SiC islands on Si(001) and Si(111) are investigated in situ using scanning tunneling microscopy.