Epitaxial growth of cubic silicon carbide on silicon using hot filament chemical vapor deposition

摘要

We are reporting the application of hot filament chemical vapor deposition for the growth of high quality single-crystalline cubic silicon carbide heteroepitaxially on silicon substrates. Rocking curve Xray diffraction measurements revealed a full-width at half maximum as low as 333 arcsec for a 15 mu m thick layer. Low tensile strain, below 0.1%, was measured using Raman spectroscopy resulting in a wafer bow as low as 6 ism over a full 4" substrate. We achieved this quality using a carefully optimized process making use of the additional degrees of freedom the hot filaments create. These allow for precursor pre-cracking and a tuning of the vertical thermal gradient, which creates an improved thermal field compared to classic chemical vapor deposition techniques used for the deposition of this material today. Measurements of the material uniformity show an influence of the lateral temperature field and of the stoichiometry, which is influenced by the graphite based sample holder. (C) 2017 Elsevier B.V. All rights reserved.