Hot-Wire Chemical Vapor Deposition for Epitaxial Silicon Growth On Large-Grained Polycrystalline Silicon Templates

摘要

We investigate low-temperature epitaxial growth of thin silicon films on Si [100] substrates and polycrystalline template layers formed by selective nucleation and solid phase epitaxy (SNSPE). We have grown 300 nm thick epitaxial layers at 300℃ on silicon [100] substrates using a high H_2: SiH_4 ratio of 70:1. Transmission electron microscopy confirms that the films are epitaxial with a periodic array of stacking faults and are highly twinned after approximately 240 nm of growth. Evidence is also presented for epitaxial growth on polycrystalline SNSPE templates under the same growth conditions.