CURRENT-VOLTAGE CHARACTERISTICS SIMULATION OF SEMICONDUCTOR DEVICES USING DOMAIN DECOMPOSITION

摘要

We study the current-voltage characteristics of one-dimensional semiconductor devices by numerical approximation based on finite elements of the steady-state semiconductor device equations. A block nonlinear Gauss-Seidel procedure is employed to decouple the full system, Then, at each iteration, a Neumann-Neumann domain decomposition method is applied to solve the linearized equations. Numerical examples will be given, with special emphasis on charge generation effects due to impact ionization. (C) 1995 Academic Press, Inc. [References: 21]