Quantum-mechanical effects in multiple-gate MOSFETs

摘要

In this work, a self-consistent solution of the 2D Schroedinger-Poisson equations is used to analyze Multiple-Gate MOSFETs. Classical simulations overestimate the peak density compared to quantum simulations and therefore the total electron density considered to calculate the current. The impact of the corner rounding on the electron distribution has also been analyzed. New devices, such as the Omega-gate MOSFETs have been studied as a function of the buried gate length.