HYBRID SUBSTRATE TECHNOLOGY FOR HIGH-MOBILITY PLANAR AND MULTIPLE-GATE MOSFETs

摘要

plane and / or multiple - gate MOSFETs (metal oxide semiconductor field effect transistors) are used in the high mobility the hybrid substrate having a surface is provided . Hybrid substrate has a second surface portion with respect to the best best first surface portion and a p-type device with respect to the n-type device . Due to the wafer surface in proper alignment with each of the semiconductor layers of the hybrid substrate , all gates of the devices are oriented in the same direction and all channels are located on the high mobility surface . In addition, the present invention comprises at least one planar or multiple- also provides a method for producing a hybrid substrate as well as how to integrate gate MOSFET