Parameter modeling for higher-order transport models in UTB SOI MOSFETs

摘要

We present a two-dimensional tabularized higher-order transport model based on extracted parameters from a Subband Monte Carlo (SMC) simulator. Important effects like quantum confinement and surface roughness scattering are automatically taken into account. Device parameters like the electron temperature or the output characteristic of a SOI MOSFET are compared with the results obtained from models using bulk Monte Carlo (MC) data, where no quantization effects and no surface roughness scattering are considered.