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首页> 外文期刊>Journal of Computational Electronics >First-principles versus semi-empirical modeling of global and local electronic transport properties of graphene nanopore-based sensors for DNA sequencing
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First-principles versus semi-empirical modeling of global and local electronic transport properties of graphene nanopore-based sensors for DNA sequencing

机译:基于石墨烯纳米孔的DNA测序传感器的全局和局部电子传输特性的第一性原理与半经验性建模

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摘要

Using first-principles quantum transport simulations, based on the nonequilibrium Green function formalism combined with density functional theory (NEGF+DFT), we examine changes in the total and local electronic currents within the plane of graphene nanoribbon with zigzag edges (ZGNR) hosting a nanopore which are induced by inserting a DNA nucleobase into the pore. We find a sizable change of the zero-bias conductance of two-terminal ZGNR + nanopore device after the nucleobase is placed into the most probable position (according to molecular dynamics trajectories) inside the nanopore of a small diameter D = 1.2 nm. Although such effect decreases as the nanopore size is increased to D = 1.7 nm, the contrast between currents in ZGNR + nanopore and ZGNR + nanopore + nucleobase systems can be enhanced by applying a small bias voltage V_b approx< 0.1 V. This is explained microscopically as being due to DNA nucleobase-induced modification of spatial profile of local current density around the edges of ZGNR. We repeat the same analysis using NEGF combined with self-consistent charge density functional tight-binding (NEGF+SCC-DFTB) or self-consistent extended Hueckel (NEGF+SC-EH) semi-empirical methodologies. The large discrepancy we find between the results obtained from NEGF+DFT vs. those obtained from NEGF+SCC-DFTB or NEGF+SC-EH approaches could be of great importance when selecting proper computational algorithms for in silico design of optimal nanoelectronic sensors for rapid DNA sequencing.
机译:使用第一原理量子输运模拟,基于非平衡格林函数形式主义和密度泛函理论(NEGF + DFT),我们研究了带有锯齿形边缘(ZGNR)的石墨烯纳米带平面内总电流和局部电子的变化。通过将DNA核碱基插入孔中而诱导的纳米孔。在将核碱基置于小直径D = 1.2 nm的纳米孔内最可能的位置(根据分子动力学轨迹)后,我们发现了两个末端ZGNR +纳米孔装置的零偏压电导有相当大的变化。尽管随着纳米孔尺寸增加至D = 1.7 nm,这种作用减弱,但可以通过施加较小的偏置电压V_b约<0.1 V来增强ZGNR +纳米孔和ZGNR +纳米孔+核碱基系统中电流之间的对比度。这是由于DNA核碱基诱导的ZGNR边缘附近局部电流密度空间分布的修饰。我们使用NEGF结合自洽电荷密度功能紧密结合(NEGF + SCC-DFTB)或自洽扩展Hueckel(NEGF + SC-EH)半经验方法,重复相同的分析。当选择适当的计算算法进行快速最佳纳米电子传感器的计算机设计时,我们发现从NEGF + DFT获得的结果与从NEGF + SCC-DFTB或NEGF + SC-EH方法获得的结果之间的巨大差异可能非常重要。 DNA测序。

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