Random phonon model of dissipative electron transport in nanowire MOSFETs

摘要

A method for quantum transport simulations of nanowire (NW) field-effect transistors (FETs) with inelastic electron-phonon scattering processes incorporated is presented in this paper. The microscopic device Hamiltonian with realistic phonon spectrum and electron-phonon interaction is transformed into an equivalent low-dimensional transport model with discrete random phonon modes. The electron-phonon coupling constants are optimized in order to reproduce the inelastic scattering effects. Small size of the model and special form of the inelastic self-energy terms in the NEGF formalism make it a powerful tool to study dissipative transport in realistic NW transistors. The utility of the method is demonstrated by computing inelastic transport characteristics in Si NW FETs.