Modeling and performance analysis of Schottky barrier carbon nanotube field effect transistor SB-CNTFET

摘要

The performance of a Schottky barrier carbon nanotube field effect transistor (SB-CNTFET) has been analyzed by means of a compact model. We present a study of the physical and geometrical parameters and their effects on the static and dynamic performance of the SB-CNTFET. For the static regime, we determine the variations in the current-voltage characteristics for three values of the potential barrier and the influence of the barrier on the on-state current. Also, we report the effect of the oxide thickness on the static performance. The relationship between the current-voltage characteristics and the nanotube diameter for different values of drain-source voltage is investigated. For dynamic systems, we study the effect of the gate-source voltage, the chirality and the CNT diameter on the transition frequency. It has been observed that the performance of the SB-CNTFET can be significantly controlled by changing some physical and geometrical parameters of the device.