Analytical modeling of the tunneling current in Schottky barrier carbon nanotube field effect transistor using the Verilog-A language

摘要

In this work, we have developed a compact analytical model for the I-V characteristics of tunnel current in a Schottky barrier CNTFET which features the main physical effects governing the operation of this device. The simulation results obtained using this model are in close agreement with numerical calculation results. This model can be implemented with a hardware description language (HDL) language like Verilog- A or VHDL-AMS for portability and standardization.