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Slew Rate and Transient Response Enhancement in MOLDO with Modifying Error Amplifier Structure

机译:修改误差放大器结构,提高MOLDO的摆率和瞬态响应

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In this paper, we use bias current boosting and slew rate enhancement in multiple-output Low-dropout structure to achieve a faster transient response. This method reduces ripples of output voltage during sudden changes in load current and input voltage. The proposed MOLDO circuit was simulated with a 0.18 mu m CMOS process in buck mode with four-output legs. Integrating of proposed circuit is easier because there is the symmetry in the circuit designing. The results of our work show that when input voltage changes between 2.5-3.3 V, the output voltage after 25 mu s with load current of 100 mA, is determined with ripple less than 1.8 mV. In sudden changes, the load current at the range 0-100 mA, and output voltages after a maximum 15.5 mu s with an input voltage of 3.3V have the highest ripple in output voltage of 4 mV.
机译:在本文中,我们在多输出低压差结构中使用偏置电流提升和压摆率增强,以实现更快的瞬态响应。这种方法可以减小负载电流和输入电压突然变化期间的输出电压纹波。所提出的MOLDO电路在降压模式下采用0.18μmCMOS工艺进行仿真,并具有四个输出引脚。由于电路设计中存在对称性,因此集成拟议的电路比较容易。我们的工作结果表明,当输入电压在2.5-3.3 V之间变化时,负载电流为100 mA时25μs后的输出电压的波动小于1.8 mV。在突然的变化中,负载电流在0-100 mA范围内,输入电压为3.3V的最大电压为15.5μs后,输出电压在4 mV的输出中具有最高纹波。

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