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首页> 外文期刊>Journal of circuits, systems and computers >A 2 × V_(DD)-Enabled Output-Capacitor-Free Low-Dropout Regulator with Fast Transient Response for Low-Cost System-on-Chip
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A 2 × V_(DD)-Enabled Output-Capacitor-Free Low-Dropout Regulator with Fast Transient Response for Low-Cost System-on-Chip

机译:具有2×V_(DD)的无输出电容器的低压降稳压器,具有快速瞬态响应,可用于低成本片上系统

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摘要

This paper presents a 2 x V-DD-enabled output-capacitor-free CMOS low-dropout (LDO) regulator with fast transient response for cost-effective system-on-chip (SoC) power management applications with elevated-V-DD supply. All the MOS transistors used in the proposed LDO regulator are low voltage (LV) MOSFETs, hence saving the high voltage devices fabrication cost required in a conventional design. Two LV power transistors are cascaded in the power train. A mid-rail regulator is used to generate 1 x V-DD voltage for the power transistors as well as the main error amplifier to guarantee safe operation. The mid-rail regulator employs stacking transistors to handle the high supply voltage. Moreover, Miller compensation with adaptive biasing is used to achieve good stability and fast transient response. A proof-of-concept design is fabricated in a standard 0.18-mu m CMOS process which achieves 3.3-3.6 V nominal input, 3.1 V nominal output and 100 mA loading capability with all the transistors being 1.8 V MOSFETs.
机译:本文介绍了一款具有快速瞬态响应的2 x支持V-DD的无输出电容器的CMOS低压降(LDO)稳压器,用于具有高V-DD电源的经济高效的片上系统(SoC)电源管理应用。提出的LDO稳压器中使用的所有MOS晶体管都是低压(LV)MOSFET,因此节省了常规设计所需的高压器件制造成本。两个LV功率晶体管级联在动力总成中。中轨稳压器用于为功率晶体管以及主误差放大器生成1 x V-DD电压,以确保安全运行。中轨稳压器采用堆叠晶体管来处理高电源电压。此外,采用具有自适应偏置的米勒补偿可实现良好的稳定性和快速的瞬态响应。概念验证设计采用标准的0.18微米CMOS工艺制造,可实现3.3-3.6 V标称输入,3.1 V标称输出和100 mA负载能力,所有晶体管均为1.8 V MOSFET。

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