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A 0.6 V MOS-Only Voltage Reference for Biomedical Applications with 40 ppm/℃ Temperature Drift

机译:适用于具有40 ppm /℃温度漂移的生物医学应用的0.6 V仅MOS电压基准

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摘要

This paper exploits the CMOS beta multiplier circuit to synthesize a temperature-independent voltage reference suitable for low voltage and ultra-low power biomedical applications. The technique presented here uses only MOS transistors to generate Proportional To Absolute Temperature (PTAT) and Complimentary To Absolute Temperature (CTAT) currents. A self-biasing technique has been used to minimize the temperature and power supply dependency. A prototype in 65 nm CMOS has been developed and occupies 0.0039 mm(2), and at room temperature, it generates a 204 mV reference voltage with 1.3 mV drift over a wide temperature range (from -40 degrees C to 125 degrees C). This has been designed to operate with a power supply voltage down to 0.6 V and consumes 1.8 uA current from the supply. The simulated temperature coefficient is 40 ppm/degrees C.
机译:本文利用CMOS beta乘法器电路来合成适合于低压和超低功率生物医学应用的与温度无关的电压基准。这里介绍的技术仅使用MOS晶体管来生成绝对温度比例(PTAT)和互补温度(CTAT)电流。自偏置技术已被用来使温度和电源的依赖性最小。已开发出65 nm CMOS的原型,占地0.0039 mm(2),在室温下,它可产生204 mV的参考电压,并在较宽的温度范围(-40摄氏度至125摄氏度)内产生1.3 mV的漂移。它被设计为在低至0.6 V的电源电压下工作,并消耗1.8 uA的电源电流。模拟的温度系数为40 ppm /摄氏度。

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  • 来源
    《Journal of circuits, systems and computers》 |2018年第8期|1850128.1-1850128.13|共13页
  • 作者单位

    Oxford Brookes Univ, Sch Engn Comp & Math, Wheatley Campus, Oxford OX33 1HX, England;

    Oxford Brookes Univ, Sch Engn Comp & Math, Wheatley Campus, Oxford OX33 1HX, England;

    Oxford Brookes Univ, Sch Engn Comp & Math, Wheatley Campus, Oxford OX33 1HX, England;

    Oxford Brookes Univ, Sch Engn Comp & Math, Wheatley Campus, Oxford OX33 1HX, England;

    Oxford Brookes Univ, Sch Engn Comp & Math, Wheatley Campus, Oxford OX33 1HX, England;

    Oxford Brookes Univ, Sch Engn Comp & Math, Wheatley Campus, Oxford OX33 1HX, England;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    CMOS; low voltage; PTAT; CTAT;

    机译:CMOS;低压;他们的乐趣;幼儿;

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