A Novel High Linearity and Low Power Folded CMOS LNA for UWB Receivers

摘要

This paper presents a high linearity and low power Low-Noise Amplifier (LNA) for Ultra-Wideband (UWB) receivers based on CHRT 0.18 mu m Complementary Metal-Oxide-Semiconductor (CMOS) technology. In this work, the folded topology is adopted in order to reduce the supply voltage and power consumption. Moreover, a band-pass LC filter is embedded in the folded-cascode circuit to extend bandwidth. The transconductance nonlinearity has a great impact on the whole LNA linearity performance under a low supply voltage. A post-distortion (PD) technique employing an auxiliary transistor is applied in the transconductance stage to improve the linearity. The post-layout simulation results indicate that the proposed LNA achieves a maximum power gain of 12.8dB. The input and output reflection coefficients both are lower than -10.0 dB over 2.5-11.5 GHz. The input third-order intercept point (IIP3) is 5.6 dBm at 8 GHz and the noise figure (NF) is lower than 4.0 dB. The LNA consumes 5.4mW power under a 1V supply voltage.