Passivity during the Oxidation of Silicon at Elevated Temperatures

摘要

The dependence of the rate of the oxidation of silicon in oxygen‐helium mixtures on gas composition at 1410°C is discussed theoretically. At low oxygen contents of the gas, no layer of solid silica is expected to occur and the rate of attack due to formation of volatile SiO is supposed to be proportional to the oxygen partial pressure in the bulk gas. Above a critical oxygen partial pressure, solid silica may be formed and the rate of attack under steady‐state conditions may drop by several powers of ten.