Determination of Mobility in Nonstoichiometric Low‐Mobility Semiconductors

摘要

The method of determining charge‐carrier mobility by combining conductance with thermogravimetric measurements is discussed. The conditions of validity of the method are analyzed for one example. It is shown that the analysis of such measurements may permit estimation of an upper limit for the width of the conduction band. Application to CoO shows that the bandwidth in CoO is ≤kT at T=1500°K.