Optical and dielectric constants of hafnium and its anodic oxide films

摘要

Optical and dielectric constants of Hf films deposited by sputtering were measured at a wavelength of 546.1 nm using ellipsometry. The thicknesses of the films deposited were 300 nm. Also, ellipsometric results are reported for HfO2 films obtained by anodizing Hf films at various forming voltages. The average value of the refractive index n1 of HfO2 films was found to be 2.09 and it remains essentially constant for the range of thickness (12.5–53.7 nm) studied.