GaAs planar technology by molecular beam epitaxy (MBE)

摘要

GaAs integrated circuits require planar growth of isolated devices on an insulating substrate. A new approach to achieve planar growth has been demonstrated by molecular beam epitaxy (MBE). In the MBE process polycrystalline and monocrystalline GaAs are selectively grown producing a pattern which consists of areas of device-quality single-crystal material isolated by semi-insulating polycrystalline material. The active device positions were defined by windows in SiO2 layers which covered the Cr-doped semi-insulating GaAs substrate.