机译:GaAs / ErAs / GaAs异质结构分子束外延中平面缺陷的抑制
Electrical and Computer Engineering Department, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd. Bldg. 160, Austin, Texas 78758, USA;
Electrical and Computer Engineering Department, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd. Bldg. 160, Austin, Texas 78758, USA;
Electrical and Computer Engineering Department, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd. Bldg. 160, Austin, Texas 78758, USA;
Electrical and Computer Engineering Department, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd. Bldg. 160, Austin, Texas 78758, USA;
机译:使用分子束外延在无砷(Ga)/ Ge / GaAs异质结构的无砷环境中原位生长Ge(100)
机译:GaAsBi / GaAs / AlGaAs分子束外延生长的独立限制异质结构
机译:GaAsBi / GaAs / AIGaAs分离限制异质结构的分子束外延生长
机译:TEM评估分子束外延生长的GaAs / InAs 3D层/ GaAs异质结构中的缺陷
机译:通过分子束外延生长低无序GaAs / AlGaAs异质结构,以研究二维相关电子相。
机译:分子束外延生长的分子束外延和GaAsBi / GaAs量子阱的性质:热退火的影响
机译:由分子束外延生长的InGaAs / GaAs异质结构中非均匀位错产生的错位及其临界厚度
机译:分子束外延(mBE) - 未掺杂Gaas / alGaas双异质结构(DH)的非辐射寿命的优化。