Construction of energy‐band diagrams for amorphous/crystalline heterojunctions

摘要

Energy‐band diagrams for amorphous/crystalline heterojunctions are constructed by using a method originally developed for crystalline heterojunctions and modifying it accordingly for an amorphous component. The only assumptions made for the amorphous semiconductor involve the determination of the energy gap and the Fermi‐level position. The validity of the procedure is shown by the consistent results obtained for the heterojunction energy‐band parameters when a given glass is deposited on both n‐ and p‐type silicon. General agreement with previously proposed models is observed.