Valence band alignment and hole transport in amorphous/crystalline silicon heterojunction solar cells

摘要

To investigate the hole transport across amorphous/crystalline silicon heterojunctions, solar cells with varying band offsets were fabricated using amorphous silicon suboxide films. The suboxides enable good passivation if covered by a doped amorphous silicon layer. Increasing valence band offsets yield rising hole transport barriers and reduced device efficiencies. Carrier transport by thermal emission is reduced and tunnel hopping through valence band tail states increases for larger barriers. Nevertheless, stacks of films with different band gaps, forming a band offset staircase at the heterojunction, could allow the application of these layers in silicon heterojunction solar cells.