Lattice defects in silicon doped by neutron transmutation

摘要

The method of silicon doping by thermal neutron transmutation (producing phosphorus atoms) is compared to the conventional method. Both the electronic and atomic lattice defects are considered. From accurate radioactive and electrical measurements, the numbers of carriers and phosphorus atoms are measured separately in order to derive the concentration of electronic defects. Diffusion profiles of gallium are determined by activation analysis as well as ion microprobe before and after neutron doping, which gives the influence of the doping on the concentration of the atomic defects responsible for diffusion. No difference between the methods of doping can be detected within the range of experimental errors.