Studies of the effect of oxidation time and temperature on the Si‐SiO2 interface using Auger sputter profiling

摘要

In this paper, we present the results of new studies of the Si‐SiO2 interface for thermal oxides using Auger electron spectroscopy with ion etching. We will describe the results obtained from a matrix of samples chosen to study the effect of oxidation time and temperature on the chemistry and morphology of the Si‐SiO2 interface. This matrix consists of oxides grown on (100) silicon that have a range of thickness 25–100 nm and growth temperatures 800–1150 °C. In order to assure proper interpretation of the results, we have developed models for electron escape depth and ion knock‐on broadening of Auger sputter profiles which will also be described. We find the 10%/90% width of the transition region between SiO2 and Si is independent of oxide thickness over the range of our measurements. The width of this transition region increases slightly between growth temperatures of 800 and 1150 °C. These results will be compared to previous Auger as well as x‐ray photoelectron spectroscopy studies on the Si‐SiO2 interface.