Formation of p‐n junctions and Ohmic contacts at laser processed Pt‐Si surface layers

摘要

Pt‐Si alloy layers are formed during 130‐nsec pulsed irradiation of Pt coated Si with light from a Nd : YAG laser. The alloys form via surface melting and resolidifaction. Laser processing of arsenic of ion implanted, p‐type silicon results in formation of a p‐n+/Pt‐Si structure that exhibits rectifying electrical behavior. This structure arises because the As and Pt impurities are zone refined to different extents during resolidification of the molten surface layer.