Electron paramagnetic resonance of extended defects in semi‐insulating GaAs

摘要

The temperature dependence, over the 4.2–100 K range, of the narrow EPR line, labeled X, with an isotropic value of g = 2.002 has been investigated in a semi‐insulating GaAs:Cr sample. From its Curie‐Weiss behavior, leading to a (T+13.1)-1 law, it is concluded that it may result from antiferromagnetic exchange coupled spins, originating from dangling bonds located on extended defects present in the crystal.