Photoexcitation effects in semi‐insulating GaAs as revealed by electron paramagnetic resonance

摘要

A set of semi‐insulating bulk GaAs samples of various specifications and origins has been studied under illumination conditions proper to reveal quenchable paramagnetic signals behaving like the metastable electrical defect EL2. Whereas In‐alloyed crystals are almost free of any defect, all other materials display photosensitive signals which are either a quenchable quadruplet constrainable to the As4+Ga configuration or two enhanceable singlets not yet fully identified; the preferred occurrence of either type of spectrum is seemingly linked to the growth method.