The interpretation of space‐charge‐limited currents in semiconductors and insulators

摘要

The specific current‐voltage‐temperature dependence of space‐charge‐limited conduction processes in semiconductors and insulators is largely determined by the distribution in energy of traps within the band gap. A linear dependence of current‐density on the square of the applied voltage, may be alternatively interpreted in terms of either a single discrete trapping level, or of an exponential trap distribution. The two types of trapping behavior may be distinguished using measurements of the variation of current with temperature for a range of different constant voltages.