Thickness of GaP liquid phase epitaxial layers grown by step‐cooling, equilibrium‐cooling, and ramp‐cooling methods

摘要

Using three different cooling processes, a series of liquid phase epitaxial growth experiments for GaP are performed to determine layer thickness, d, as a function of growth time, t, and amount of supercooling temperature, Δ. Comparison is made with layer thickness predictions that are derived from a diffusion‐controlled model. Good agreement is obtained for growth times, t, less than the diffusion time, τ, of solute in the melt. The results indicate that, in addition to GaAs and InP, the diffusion‐controlled model generally provides good predictions for liquid phase epitaxial grown GaP layers thickness as well.