Thickness of InP Layers Grown by LPE from Supercooled Solutions.

摘要

The thickness of InP layers grown by liquid phase epitaxy from supercooled In-P solutions has been measured as a function of the amount of supercooling and growth time for temperatures between 550 and 680 C. The data, which are quantitatively consistent with diffusion-controlled growth, have been used to determine the diffusivity of P in In-rich solutions. The diffusivity was found to be well represented by the expression D(sq cm/s = 4.28 exp(-11 450/T). The solubility of P, and the loss rate of P from In-P solutions were accurately measured.