Impurity (Si) concentration effects on radiation‐induced deep traps in n‐InP

摘要

Impurity concentration effects on radiation defects and minority carrier (hole) diffusion length in 1‐MeV electron irradiated n‐InP have been studied by deep level transient spectroscopy and the electron beam induced current method. Trap concentrations are found to markedly decrease with an increase in the Si‐impurity concentration. It is also indicated that Si‐impurity doping more than 1017 cm-3 of concentration shows a strong suppression effect on degradation in minority carrier diffusion length, caused by electron irradiation in n‐InP.