Infrared reflectance evaluation of chemically vapor deposited β‐SiC films grown on Si substrates

摘要

We use infrared reflectance from 400 to 4000 cm-1 to evaluate cubic SiC films grown by chemical vapor deposition on Si substrates. From different regions of the spectra we determine precise film thicknesses, estimate carrier concentrations in highly doped specimens, observe roughness at both film surfaces, and detect conducting regions at the interface. We show how the roughness and the interfacial conducting region introduce nonideality into the spectra. The method is nondestructive and the information can be obtained in less than 1 h after film growth.