CHEMICAL VAPOR DEPOSITION SIC COATING METHOD FOR A COATING MATRIX DEPOSITING A COATING FILM ON THE SURFACE OF A COATING MATRIX IN A LOW TEMPERATURE BAND AND A LOW PRESSURE BAND

摘要

PURPOSE: A CVD(Chemical Vapor Deposition) SiC coating method for a coating matrix is provided to densify membrane by injecting gas, which is easily decomposed at the low temperature/pressure band, thereby improving the surface of a coating matrix.;CONSTITUTION: A CVD SiC coating method for a coating matrix comprises the steps of: lowering the pressure of a coating place, in which a coating matrix is put, by using a vacuum pump; applying a low temperature band, which has a temperature between 600 to 1,200°C, and a low pressure band, which is 500mTorr or less, and depositing an SiC coating film by injecting and dissolving the gases, SiH2Cl2 and CH4, on the surface of the coating matrix. If the SiC coating film is deposited on the surface of the coating matrix, the room temperature for the coating place is changed. If the room temperature for the coating place reaches the room temperature, the coated matrix is discharged by increasing the pressure up to the atmospheric pressure.;COPYRIGHT KIPO 2013;[Reference numerals] (AA) Front; (BB) Back