Growth condition dependence of EL2 concentrations in magnetic field applied liquid‐encapsulated Czochralski GaAs crystals

摘要

In the magnetic field applied liquid‐encapsulated Czochralski (MLEC) GaAs crystals, midgap level EL2 concentrations have been found to be strongly affected by the melt composition and crystal versus crucible rotational conditions. Although the EL2 concentrations only varied from 1 to 4×1016 cm-3 in the conventional LEC GaAs crystals, they ranged from far below 1×1015 cm-3 in Ga‐rich melt to 1×1017 cm-3 in As‐rich melt for the MLEC GaAs crystals.