B2O3 CLEANING METHOD FOR GAAS CRYSTAL GROWTH BY LIQUID-ENCAPSULATED CZOCHRALSKI

摘要

A single crystal growth apparatus and a method for cleaning a liquid encapsulating agent using the same are provided to perform easily a single crystal growth by enhancing a compositional rate of a GaAs melt using a liquid encapsulating agent cleaning mechanism. A single crystal growth apparatus includes a liquid encapsulating agent cleaning mechanism. The liquid encapsulating agent cleaning mechanism(40) is capable of pushing an As lump into a melt layer of a liquid encapsulating agent after a synthesizing process in a GaAs LEC(Liquid Encapsulated Czochralski) and melting the pushes As lump. The liquid encapsulating agent cleaning mechanism is capable of being used as a stick in a Ga solution lump forming process.