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首页> 外文期刊>Journal of Applied Physics >Phase transition behavior in microcantilevers coated with M1-phase VO2 and M2-phase VO2:Cr thin films
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Phase transition behavior in microcantilevers coated with M1-phase VO2 and M2-phase VO2:Cr thin films

机译:M1相VO2和M2相VO2:Cr薄膜包覆的微悬臂梁的相变行为

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摘要

Silicon microcantilevers were coated by pulsed laser deposition with vanadium dioxide (VO2) (monoclinic M1 phase) and V1-xCrxO2 with x near 0.024 (monoclinic M2 phase), and their mechanical characteristics were studied as a function of temperature through the films’ insulator-to-metal transition (IMT). The undoped VO2 films grew with (011)M1 planes parallel to the substrate, while Cr-doped VO2 films grew oriented with (201)M2 and (201)M2 planes parallel to the substrate. In both cases, the films transformed reversibly through the IMT to the tetragonal (rutile, R) phase, with film (110)R planes oriented parallel to the substrate. The fundamental resonant frequencies of the cantilevers were measured as the temperature was cycled from ambient temperature, through the IMT, and up to 100  °C. Very high resonant frequency changes were observed through the transition for both types of samples, with increases during heating of over 11% and over 15% for the cantilevers coated with pure and Cr-doped VO2, respectively. From the resonant frequencies measured at room temperature for the bare and coated cantilevers in each case, the effective Young’s moduli of the films were determined. The values obtained, assuming bulk densities for the films, are 156 ± 7.5 GPa for VO2 (M1 phase) and 102 ± 3 GPa for Cr-doped VO2 (M2 phase). Strong curvature changes during the transition to the R phase were also observed for cantilevers coated with both types of films, but these were significantly higher in the case for the Cr-doped film. Curvature changes for temperature ranges outside the IMT region were small and attributed to differential thermal expansion between film an- silicon substrate. From measured cantilever tip displacements in this post-transition range—for the undoped VO2-coated microcantilevers—a rough estimate of 110 GPa was obtained for the effective Young’s modulus for R-phase VO2. The substantially higher changes in resonant frequency and curvature for V1-xCrxO2-coated cantilevers suggest that this material may be even more useful than M1-phase VO2 for prospective microelectromechanical or optomechanical device applications in which ample frequency tunability—in oscillators or filters—or large displacements—in actuators—within a small temperature range is desirable. Since M2-phase V1-xCrxO2 with Cr composition of a few atomic percent retains other desirable properties of VO2, such as very high resistivity changes through the IMT and a transition temperature fairly close to ambient temperature, multifunctionality is not impaired and in fact may be enhanced for some applications.
机译:通过脉冲激光沉积用二氧化钒(VO 2 )(单斜M 1 相)和V 1-x Cr 2 相)的> x O 2 ,并通过薄膜的绝缘体研究了它们的机械特性随温度的变化,金属过渡(IMT)。未掺杂的VO 2 薄膜的生长方向为(011) M1 平面平行于基底,而Cr掺杂的VO 2 薄膜的取向为(201) ) M2 和(201) M2 平行于基板的平面。在这两种情况下,薄膜均通过IMT可逆地转变为四方(金红石型,R)相,且薄膜(110) R 平面平行于基材。悬臂的基本谐振频率是在温度从环境温度循环到IMT并高达100°C的过程中测量的。两种类型的样品在转变过程中都观察到非常高的共振频率变化,加热过程中,分别涂覆纯铬掺杂和Cr掺杂的VO 2 的悬臂分别增加了11%和15%以上。根据在每种情况下裸露和涂层悬臂在室温下测得的共振频率,可以确定薄膜的有效杨氏模量。假设薄膜的堆积密度,则得到的值对于VO 2 (M 1 相)为156±7.5 GPa,对于Cr掺杂VO sub102±3 GPa > 2 (M 2 阶段)。对于用两种类型的薄膜涂覆的悬臂,在过渡到R相的过程中也观察到了强烈的曲率变化,但对于掺Cr的薄膜,则明显更高。 IMT区域之外的温度范围的曲率变化很小,这归因于薄膜硅衬底之间的热膨胀差异。从在此过渡后范围内测得的悬臂尖端位移(对于未掺杂的VO 2 涂层的微悬臂梁),得出了R相VO 2的有效杨氏模量的大致估算值110 GPa 。 V 1-x Cr x O 2 涂层悬臂的共振频率和曲率的变化明显更高,表明该材料可能甚至更大。比M 1 相VO 2 有用,适用于预期的微机电设备或光机电设备,其中在振荡器或滤波器中有足够的频率可调性,在执行器中有很大的位移量,而在很小的范围内温度范围是理想的。由于M 2 相V 1-x Cr x O 2 的Cr组成为几个原子百分比VO 2 的其他理想特性,例如通过IMT的非常高的电阻率变化和相当接近环境温度的转变温度,多功能性不会受到损害,实际上对于某些应用可能会得到增强。

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  • 来源
    《Journal of Applied Physics》 |2012年第10期|p.1-10|共10页
  • 作者

    Rua Armando;

  • 作者单位
  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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