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Dielectric resonance and magnetic properties of Fe-3% doped BaSnO3 thin films grown by pulsed laser deposition

机译:脉冲激光沉积生长Fe-3%掺杂BaSnO3薄膜的介电共振和磁性

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摘要

Fe-3% doped BaSnO3 thin films of good crystalline quality with lattice constant a = 4.053 Å were grown on (2 0 0) n-type Si substrates by pulsed laser deposition. Micro Raman spectra of the thin films showed the presence of strain-induced Raman modes with reference to that of the bulk polycrystalline Fe-3% doped BaSnO3. The films exhibited dielectric resonance in the frequency range 20 – 60 MHz and it is explained qualitatively based on the phenomenon of electromechanical piezoelectric resonance. The measured values of the resonant frequency and the surface resistivity showed a strong dependence on the thickness and the crystalline-character of the thin films. Magnetic measurements were performed selectively for the two films having (2 0 0) preferred orientation. It was found that both of them possess ferromagnetic ordering at 300 K and 1.8 K. At 300 K, the inherent diamagnetism of the undoped BaSnO3 was found to be dominating for higher applied magnetic field.
机译:通过脉冲激光沉积在(2 0 0)n型Si衬底上生长了晶格常数为a = 4.053Å的,具有良好晶体质量的Fe-3%掺杂BaSnO3薄膜。薄膜的微拉曼光谱表明存在应变诱导的拉曼模式,这是相对于本体多晶Fe-3%掺杂的BaSnO3而言。这些薄膜在20-60 MHz的频率范围内表现出介电共振,并基于机电压电共振现象进行了定性解释。谐振频率和表面电阻率的测量值显示出对薄膜的厚度和晶体特性的强烈依赖性。对具有(2 0 0)优选取向的两层膜选择性地进行了磁测量。发现它们在300 K和1.8 K时都具有铁磁有序。在300 K时,发现未掺杂的BaSnO3的固有反磁性在较高的施加磁场中起主导作用。

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