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机译:在可变氧沉积压力下通过脉冲激光沉积在(001)MgO上生长的W掺杂Ba0.6Sr0.4TiO3薄膜的微波介电性能
George Washington Univ, Sch Engn & Appl Sci, Washington, DC 20052 USA;
USN, Res Lab, Washington, DC 20375 USA;
SFA Inc, Crofton, MD 21114 USA;
US DOE, Div Sci Mat, Washington, DC 20585 USA;
MesoScribe Technol Inc, Stony Brook, NY 11790 USA;
Pulsed Laser Deposition (PLD); microwave properties; BST; dielectric properties; COMBINATORIAL SYNTHESIS; PHASE SHIFTERS; STRAIN; LIBRARIES;
机译:氧分压对(laalo_3)_(0.3)(sr_2altao_6)_(0.35)(001)上生长的Ba(zr_(0.3)ti_(0.7))o_3薄膜的结构和介电性能的影响
机译:通过脉冲激光沉积在MgO(001)衬底上生长的Ba_(0.5)Sr_(0.5)TiO_3-Bi_(1.5)ZnNb_(1.5)O_7复合薄膜的介电性能和异常C-V特性
机译:生长缺陷对(001)MgO上脉冲激光沉积生长Ba0.5Sr0.5TiO3外延薄膜中微波性能的影响
机译:脉冲激光沉积生长的(001)和(011)高速电Ba_(1-x)Sr_xTiO_3薄膜的微波介电性能比较
机译:通过脉冲激光沉积和溶胶-凝胶法控制氧化锌薄膜的电阻率和光学性质。
机译:衬底温度和氧分压对脉冲激光沉积生长纳米晶铜氧化物薄膜性能的影响
机译:氧分压对脉冲激光沉积在(LaAlO3)0.3(Sr2AlTaO6)0.35(001)上生长的Ba(Zr0.3Ti0.7)O3薄膜的结构和介电性能的影响