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Temperature-dependent Raman and ultraviolet photoelectron spectroscopy studies on phase transition behavior of VO2 films with M1 and M2 phases

机译:基于温度的拉曼光谱和紫外光电子能谱研究具有M1和M2相的VO2薄膜的相变行为

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摘要

Structural and electronic phase transitions behavior of two polycrystalline VO2 films, one with pure M1 phase and the other with pure M2 phase at room temperature, were investigated by temperature-controlled Raman spectroscopy and ultraviolet photoelectron spectroscopy (UPS). We observed characteristic transient dynamics in which the Raman modes at 195 cm−1 (V-V vibration) and 616 cm−1 (V-O vibration) showed remarkable hardening along the temperature in M1 phase film, indicating the rearrangements of V-V pairs and VO6 octahedra. It was also shown that the M1 Raman mode frequency approached those of invariant M2 peaks before entering rutile phase. In UPS spectra with high energy resolution of 0.03 eV for the M2 phase film, narrower V3d band was observed together with smaller gap compared to those of M1 phase film, supporting the nature of Mott insulator of M2 phase even in the polycrystalline film. Cooperative behavior of lattice rearrangements and electronic phase transition was suggested for M1 phase film.
机译:通过温度控制拉曼光谱和紫外光电子能谱(UPS)研究了两种多晶VO2薄膜的结构和电子相变行为,其中一个纯M1相,另一个纯M2相。我们观察到特征瞬态动力学,其中在195 cm -1 (VV振动)和616 cm -1 (VO振动)下的拉曼模式沿M1的温度表现出明显的硬化。相膜,表明VV对和VO6八面体的重排。还表明,在进入金红石相之前,M1拉曼模式频率接近不变的M2峰值。在M2相膜中具有0.03 eV的高能量分辨率的UPS光谱中,与M1相膜相比,观察到了更窄的V3d谱带以及更小的间隙,即使在多晶膜中也支持M2相的Mott绝缘子的性质。 M1相膜建议晶格重排和电子相变的协同行为。

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