Abnormal electrical capacitance behavior of VO2-films-based microstructures near semiconductor-to-metal phase transition

摘要

Abnormal behavior of electrical capacity was investigated for planar microstructures consisting of VO2 films grown on sapphire and metal (Ni/Au) electrodes. At heating from 293K to 350K abrupt change in electrical capacitance of microstructures was revealed by 7 orders of magnitude. Abnormally high electrical capacity is supposed to cause by metal clusters formation with divaricated surface in VO2 films near semiconductor-to-metal phase transition.