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机译:(001)Zincblende GaN / 3C-SiC成核层中的缺陷结构
Department of Materials Science and Metallurgy University of Cambridge 27 Charles Babbage Road Cambridge CB3 OFS United Kingdom Institute of Physics of Materials & CEITEC IPM Czech Academy of Sciences Zizkova 22 61600 Brno Czech Republic;
Department of Materials Science and Metallurgy University of Cambridge 27 Charles Babbage Road Cambridge CB3 OFS United Kingdom;
Department of Materials Science and Metallurgy University of Cambridge 27 Charles Babbage Road Cambridge CB3 OFS United Kingdom;
Department of Materials Science and Metallurgy University of Cambridge 27 Charles Babbage Road Cambridge CB3 OFS United Kingdom Department of Physics SUPA University of Strathclyde 107 Rottenrow East Glasgow G4 0NG United Kingdom;
Department of Materials Science and Metallurgy University of Cambridge 27 Charles Babbage Road Cambridge CB3 OFS United Kingdom;
Department of Materials Science and Metallurgy University of Cambridge 27 Charles Babbage Road Cambridge CB3 OFS United Kingdom Centre for High Frequency Engineering University of Cardiff 5 The Parade Newport Road Cardiff CF24 3AA United Kingdom;
Institute of Physics of Materials & CEITEC IPM Czech Academy of Sciences Zizkova 22 61600 Brno Czech Republic;
Department of Materials Science and Metallurgy University of Cambridge 27 Charles Babbage Road Cambridge CB3 OFS United Kingdom;
机译:缺陷诱导形核和外延:合理合成WZ-GaN / 3C-SiC核-壳异质结构的新策略
机译:使用Al_xGa_(1-x)N / GaN超晶格底层降低(001)GaAs衬底上立方GaN外延层中的点缺陷密度
机译:金属有机气相外延法在(001)GaAs衬底上生长具有AlGaN / GaN超晶格下层的立方GaN外延层中的缺陷密度降低
机译:用于3C-SiC异质外延的Si(001)碳化层中的界面应变和缺陷
机译:通过异质外延GaN薄膜中的缓冲层控制应力和缺陷
机译:在(111)3C-SIC上生长的外延ALN / GAN薄膜缺陷结构研究
机译:(001)生长的电子结构和电子自旋退相干 分层的闪锌矿半导体