首页> 外国专利> Wiring structures manufacturing method for integrated switching arrangement, involves applying nucleation and insulating layers on planarized surface, and galvanic depositing electro conductive material on open areas of nucleation layer

Wiring structures manufacturing method for integrated switching arrangement, involves applying nucleation and insulating layers on planarized surface, and galvanic depositing electro conductive material on open areas of nucleation layer

机译:用于集成开关装置的布线结构的制造方法,包括在平坦化的表面上施加成核层和绝缘层,以及在成核层的开放区域上电沉积导电材料

摘要

The method involves applying an electrically insulating layer (72) on a planarized surface of an integrated switching arrangement after the application of an electro conductive nucleation layer (74) on the surface. The insulating layer is structured so that areas of the nucleation layer are laid open. An electro conductive material is galvanically deposited on the areas laid open.
机译:该方法包括在表面上施加导电成核层(74)之后在集成开关装置的平坦化表面上施加电绝缘层(72)。构造绝缘层,使得成核层的区域被敞开。导电材料被电沉积在敞开的区域上。

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