Effect of indium and antimony doping on the transport properties of direct vapour transport (DVT) grown SnSe single crystals

摘要

Pure SnSe, 5% In, 10% In, 5% Sb, and 10% Sb doped SnSe single crystals were grown by the direct vapour transport technique. The energy dispersive X-ray analysis study of the samples showed them to be near stoichiometric but slightly Sn deficient. The X-ray diffraction study of all the as-grown single crystal samples showed that they possess an orthorhombic structure and the lattice parameters are in good agreement with the reported parameters. The thermoelectric power (S), dc electrical conductivity (sigma), and thermal conductivity (kappa) variation with temperature from ambient to 573 K substantiated the semiconducting nature of all the five samples. The sign of "S"was positive for all five samples for all the temperature range stating the sample to be a p-type semiconductor. The power factor (S-2 sigma) and figure of merit (ZT) variation with temperature showed that pure SnSe possesses the highest value compared to doped samples. The obtained results are studied and discussed in detail. Published by AIP Publishing.