首页> 外国专利> Doped silicon monocrystal prodn - by using a seed crystal to draw a rod shaped single crystal uniformly doped with a pre-determined amt of antimony

Doped silicon monocrystal prodn - by using a seed crystal to draw a rod shaped single crystal uniformly doped with a pre-determined amt of antimony

机译:掺杂的单晶硅产品-通过使用籽晶绘制均匀掺杂有预定量的锑的棒状单晶

摘要

Entire length of rod is uniformly doped by using a seed crystal to draw the monocrystal from a melt of silicon with a predetermined antimony content. The drawing process is carried out in an evacuable reaction vessel and in a protective gas atmosphere at sub-atmospheric pressure, part of the antimony being evaporated from it during the drawing process.
机译:通过使用籽晶从具有预定锑含量的硅熔体中拉出单晶,可以均匀地掺杂整个棒的长度。抽提过程是在可抽空的反应容器中和低于大气压的保护性气体气氛中进行的,在抽提过程中一部分锑从其中蒸发掉。

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