ELECTRICAL TRANSPORT PROPERTIES OF SnS AND SnSe SINGLE CRYSTALS GROWN BY DIRECT VAPOUR TRANSPORT TECHNIQUE

摘要

Tin monosulphide and Tin monoselenide single crystals have been grown by a direct vapour transport technique. Confirmation of stoichiometric proportion of constituent elements and determination of crystal structure of grown crystals were done by EDAX and powder X-ray diffraction analysis. The resistivity and thermoelectric power measurements were carried out in the temperature range 308 K to 573 K. The Hall coefficient, carrier concentration and Hall mobility were determined from Hall effect measurements at room temperature