Transport and optical property measurements in indium intercalated molybdenum diselenide single crystals grown by DVT technique

摘要

This paper describes the transport and optical property measurements in indium intercalated MoSe2 single crystals. The crystals have been grown by a direct vapour transport (DVT) technique. Various transport properties, e.g. room temperature resistivity, high temperature resistivity (perpendicular to c-axis from room temperature to 423 K and parallel to c-axis from room temperature to 773 K), anisotropy ratio, low temperature resistivity (77 K to room temperature), Hall effect measurements, thermo-power measurements have been carried out MI the results have been systematically presented. This study has clearly shown that indium intercalated molybdenum diselenide like the host crystal MoSe_2 are n-type semiconductors. Optical absorption studies of the grown crystals have been used to evaluate the energies of the direct band gaps in them. The variation of direct energy gap with amount of indium in In_xMoSe_2 has been adequately explained.