Spin dependent transport in ferromagnet/superconductor/ferromagnet single electron transistor

摘要

Ferromagnetic single electron transistors with Al islands and orthogonal ferromagnetic leads (Co) are fabricated using e-beam lithography followed by shadow evaporation techniques. I-V characteristics exhibit typical single electron tunneling effects. Transport measurements performed in external magnetic field show that, when the two ferromagnetic leads are in antiparallel configuration, spin imbalance leads to a suppression of superconductivity.